发明名称 |
Semiconductor structure having low resistance and method of manufacturing same |
摘要 |
Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming such devices. Between forming a polysilicon layer and a metal layer, an interface reaction preventing layer is created. This reaction preventing layer prevents a buildup of highly resistive materials that would otherwise occur when creating conventional semiconductor devices, as well as having other functions.
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申请公布号 |
US2004238876(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030448534 |
申请日期 |
2003.05.29 |
申请人 |
YOUN SUNPIL;HEO SEONG-JUN;KIM SUNG-MAN;LEE CHANG-WON;KU JA-HUM;CHOI SIYOUNG |
发明人 |
YOUN SUNPIL;HEO SEONG-JUN;KIM SUNG-MAN;LEE CHANG-WON;KU JA-HUM;CHOI SIYOUNG |
分类号 |
H01L21/28;H01L21/768;H01L29/49;H01L29/78;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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