Thin film transistor substrate and method of manufacturing the same

摘要

Lest gate lead lines 122 which are readily corrodable in atmosphere should be exposed on the cutting surface formed at the time of separating an inner display area, which includes gate and drain terminals, in an eventual TFT substrate 100 from static electricity protection lead lines 4 and static electricity protection elements 19, gate terminal electrodes 115 which is formed from corrosion-resistant ITO are cut apart in the vicinity of the gate and drain terminals 3 and 8.