发明名称 THIN FILM CIRCUIT DEVICE AND METHOD FOR MANUFACTURING THE SAME, ELECTRIC OPTIC DEVICE AND ELECTRONIC EQUIPMENT, PARTICULARLY IN CONCERNED WITH REALIZING THREE-DIMENSIONAL CIRCUIT STRUCTURE
摘要 PURPOSE: A thin film circuit device and a method for manufacturing the same, an electric optic device and an electronic equipment are provided to realize a three-dimensional circuit structure by laminating thin film circuit layers. CONSTITUTION: A first thin film circuit is formed between an underlayer and a protective layer. A first thin film circuit layer(21) includes a lower connection electrode(211) connected with the first thin film circuit for being exposed at a part of a lower surface of the underlayer. A second thin film circuit is formed between the underlayer and the protective layer. A second thin film circuit layer(22) includes an upper connection electrode(229) connected with the second thin film circuit for being exposed at a part of an upper surface of the protective layer and a lower connection electrode(221) connected with the second thin film circuit for being exposed at a part of the lower surface of the underlayer. The lower connection electrode of the first thin film circuit layer is connected with the upper connection electrode of the second thin film circuit layer.
申请公布号 KR20040100886(A) 申请公布日期 2004.12.02
申请号 KR20040028875 申请日期 2004.04.27
申请人 SEIKO EPSON CORPORATION 发明人 UTSUNOMIYA, SUMIO
分类号 G02F1/1345;G02F1/136;G09F9/30;H01L21/02;H01L21/336;H01L21/768;H01L21/77;H01L21/8238;H01L21/84;H01L23/52;H01L27/00;H01L27/08;H01L27/092;H01L27/12;H01L29/786;H01L51/50;(IPC1-7):G02F1/136 主分类号 G02F1/1345
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