SEMICONDUCTOR MEMORY DEVICE FOR REDUCING CURRENT CONSUMPTION AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor memory device and a manufacturing method thereof are provided to reduce current consumption by forming a heat-radiating material layer with a plasma-oxidized surface under a chalcogenide material layer. CONSTITUTION: A heat-radiating part is formed between a transistor(20) and a data storage part(30). A metal line(50) is connected with the data storage part. The data storage part includes a chalcogenide material layer(40) for storing data according to a phase shift caused by the heat of the heat-radiating part. The heat-radiating part includes a via hole for exposing partially the transistor, a spacer(34) formed at sides of the via hole, and a heat-radiating material layer(36) filled in the via hole. An upper surface of the heat-radiating part is oxidized.