SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE, AND PORTABLE ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To obtain a semiconductor memory in which the structure is simplified at the nonvolatile memory section.

SOLUTION: The semiconductor memory is provided with a nonvolatile memory section and a volatile memory section. The nonvolatile memory section is provided with a gate electrode formed on a semiconductor layer through a gate insulating film, a channel region arranged beneath the gate electrode, a diffusion region arranged on the opposite sides of the channel region and having a conductivity type reverse to that of the channel region, and a memory function body formed on the opposite sides of the gate electrode and having a charge holding function.

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