| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage device such as an SRAM (static random access memory) wherein soft error tolerance is improved by increasing node capacitance without enlarging chip area and cell area and further without changing a cell pattern, and to provide a method for manufacturing the semiconductor storage device. <P>SOLUTION: Side wall insulating films 5, 5b which are constituted of a silicon nitride film etc. and formed on a gate side wall are thinned to e.g. at most 20 nm. Node wirings 6, 6b containing nodes or contacts are formed so as to adjoin the side wall insulating films or cover at least halfway. As a result, cell capacitance or node capacitance can be increased. Hence, soft error tolerance is improved by increasing the cell capacitance or the node capacitance even if supply voltage becomes low. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
