发明名称 Sub-column-repair-circuit
摘要 An arrangement for repairing at least one faulty bit line of a memory includes three multiplexer stages. The memory has a plurality of columns, each column having k memory subcolumns. Each memory subcolumn has n bit lines. The first multiplexer stage has k multiplexers, each multiplexer having a multiplexer output and n multiplexer inputs connected to n bitlines of a memory subcolumn. The multiplexers of the first multiplexer stage are switched in response to a first address decoding signal. The second multiplexer stage has k multiplexers, each second stage multiplexer having a first multiplexer input connected to a multiplexer output of a first stage multiplexer associated with a first memory subcolumn, a second multiplexer input connected to a multiplexer output of a first stage multiplexer associated with a second memory subcolumn, and a multiplexer output. The multiplexers of the second multiplexer stage are switched in response to a fuse data signal. The third multiplexer stage includes at least one multiplexer having k multiplexer inputs connected to the multiplexer outputs of the multiplexers of the second multiplexer stage and one multiplexer output operably connected to a data bus of the memory. The multiplexer of the third multiplexer stage is switched in response to a second address decoding signal.
申请公布号 US2004240283(A1) 申请公布日期 2004.12.02
申请号 US20040853855 申请日期 2004.05.26
申请人 INFINEON TECHNOLOGIES AG 发明人 TELLIER YANNI
分类号 G11C29/00;(IPC1-7):G11C29/00 主分类号 G11C29/00
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