发明名称 Substrate processing apparatus and substrate transferring method
摘要 Suppressed are shock waves occurring when opening a gate valve between two vacuum chambers and peeling of particles by a viscous force taking place when a gas is supplied into a vacuum chamber, whereby contamination of a substrate by particles is suppressed. If one vacuum chamber is a substrate processing chamber for performing a vacuum process on the substrate and the other chamber is a transfer chamber having a substrate transfer device therein, the gate valve is opened when inner pressures of both the vacuum chambers are less than 66.5 Pa and a higher one thereof is less than twice a lower one thereof. Preferably, a purge gas for peeling of particles is supplied, before supplying the purge gas for pressure control, into the substrate processing chamber with a flow rate greater than that of the purge gas for pressure control.
申请公布号 US2004240971(A1) 申请公布日期 2004.12.02
申请号 US20040858049 申请日期 2004.06.02
申请人 TOKYO ELECTRON LIMITED 发明人 TEZUKA KAZUYUKI;KOIZUMI HIROSHI;MORIYA TSUYOSHI;NAKAYAMA HIROYUKI
分类号 B65G49/00;H01L21/00;H01L21/02;H01L21/3065;H01L21/677;(IPC1-7):B65G1/00 主分类号 B65G49/00
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