发明名称 METHOD OF FORMING PHOTOMASK PATTERN AND METHOD OF INSPECTING PROCESS FAILURES IN PRE-ACTIVE FORMATION STEP OF SEMICONDUCTOR PROCESS
摘要 PURPOSE: A method of forming a photomask pattern and a method of inspecting process failures in a pre-active formation step of a semiconductor process are provided to check easily failures by performing an ion-implantation process or an align-key forming process using a first photoresist pattern and a second photoresist pattern. CONSTITUTION: A photoresist layer is coated on a bare wafer(S10). A first photoresist pattern for defining a shot boundary region and a second photoresist pattern are formed by exposing selectively the photoresist layer(S12). The second photoresist pattern is provided as a mask pattern in a pre-active formation process. The pre-active formation process includes an ion-implantation process or an align-key forming process.
申请公布号 KR20040100717(A) 申请公布日期 2004.12.02
申请号 KR20030033163 申请日期 2003.05.24
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, JEONG U
分类号 H01L21/027;(IPC1-7):H01L21/027 主分类号 H01L21/027
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