发明名称 |
METHOD OF FORMING PHOTOMASK PATTERN AND METHOD OF INSPECTING PROCESS FAILURES IN PRE-ACTIVE FORMATION STEP OF SEMICONDUCTOR PROCESS |
摘要 |
PURPOSE: A method of forming a photomask pattern and a method of inspecting process failures in a pre-active formation step of a semiconductor process are provided to check easily failures by performing an ion-implantation process or an align-key forming process using a first photoresist pattern and a second photoresist pattern. CONSTITUTION: A photoresist layer is coated on a bare wafer(S10). A first photoresist pattern for defining a shot boundary region and a second photoresist pattern are formed by exposing selectively the photoresist layer(S12). The second photoresist pattern is provided as a mask pattern in a pre-active formation process. The pre-active formation process includes an ion-implantation process or an align-key forming process.
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申请公布号 |
KR20040100717(A) |
申请公布日期 |
2004.12.02 |
申请号 |
KR20030033163 |
申请日期 |
2003.05.24 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE, JEONG U |
分类号 |
H01L21/027;(IPC1-7):H01L21/027 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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