| 发明名称 |
COMPOSITION FOR THE CHEMICAL MECHANICAL POLISHING OF METAL LAYERS |
| 摘要 |
A composition for CMP and a method for using the same, whereas the chemical mechanical polishing slurry composition comprises: a fluorine-containing compound, an abrasive and water. Optionally, an oxidizer and a carboxylic acid can be used as additives in the slurry composition. The resulting slurry is especially useful for the polishing of tantalum and copper layers on a substrate.
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| 申请公布号 |
WO9967056(A1) |
申请公布日期 |
1999.12.29 |
| 申请号 |
WO1999US13709 |
申请日期 |
1999.06.17 |
| 申请人 |
ARCH SPECIALTY CHEMICALS, INC. |
发明人 |
MRAVIC, BRIAN;PASQUALONI, ANTHONY, MARK;MAHULIKAR, DEEPAK;MADELUNG, THOMAS, P. |
| 分类号 |
C09G1/02;C23F3/00;H01L21/321;(IPC1-7):B24B37/04;C23F1/44;H01L21/302 |
主分类号 |
C09G1/02 |
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