| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an inspection technique for semiconductor device which can precisely and immediately grasp a problem and can speedily perform countermeasure processing in a manufacturing process, by inspecting a wafer in process where inspection has been impossible by the conventional techniques. <P>SOLUTION: The wafer in process is irradiated with electron beams a plurality of times at prescribed intervals with a condition that junction becomes reverse bias. The relax time characteristics of the reverse bias charged potential of pn junction is evaluated by monitoring signals of secondary electrons. As a result, since the charged potential of pn junction is relaxed depending on the size of a reverse bias current within intermittent time, the reverse bias current can be specified from the luminance signal of a potential contrast image. Thus, a designated region can be automatically inspected by sequentially repeating an operation for performing the inspection technique and storing the luminance signal. Information on a picture in a wafer surface and brightness distribution are automatically preserved and output after inspection. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
