| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a C-SiC sintered compact having properties such as pressure resistance, heat resistance, hardness or conductivity equal to or above that of a graphite sintered compact or a C-C composite. <P>SOLUTION: The C-SiC sintered compact is obtained by being sintered by a discharge plasma sintering method and has characteristics equal to or above that of the graphite base material and more excellent in the heat resistance and the pressure resistance. The C-SiC sintered compact has density and mechanical strength equal to or above that of the C-C composite. The method of manufacturing the C-SiC sintered compact includes a process for obtaining a mixture of SiC particle having 10-100 nm average particle diameter and a carbon particle having 5-500 nm average particle diameter, a process for filling the powdery mixture into a prescribed shaped sintering mold, and a process for sintering the powder filled in the sintering mold by a compressed sintering process. The sintering is carried out under the sintering condition of the sintering temperature elevated to 1,600-2,200°C and the holding time of 0-2 hr. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
