发明名称 |
LIQUID CRYSTAL DEVICE, ACTIVE MATRIX SUBSTRATE, DISPLAY UNIT, AND ELECTRONIC APPARATUS |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a liquid crystal device capable of suppressing TFT (thin film transistor) leak currents to a very low level and can easily deal with pixels made high-definition, and to provide an electronic apparatus having the same. <P>SOLUTION: In this liquid crystal device, a TFT 30 is a p-type transistor comprising a polycrystalline silicon semiconductor layer 42 and a plurality of gate electrodes 32-34 crossing the semiconductor layer 42 at a plurality of points. Low-concentration doped regions 1b, 1c are formed on both sides of each of channel regions 1a in the semiconductor layer 42 for the construction of an LDD (laser diode driver) structure. A light shielding means (a light shielding film 15, a data line bifurcation section 6c) is provided on both sides of the TFT 30 in the direction of its thickness. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
申请公布号 |
JP2004342923(A) |
申请公布日期 |
2004.12.02 |
申请号 |
JP20030139205 |
申请日期 |
2003.05.16 |
申请人 |
SEIKO EPSON CORP |
发明人 |
KOIDE SHIN;ITO TOMOYUKI;KOSHIHARA TAKESHI;KITAGAWA ATSUSHI |
分类号 |
G02F1/1335;G02F1/136;G02F1/1362;G02F1/1368;H01L21/336;H01L29/786 |
主分类号 |
G02F1/1335 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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