发明名称 FLAW INSPECTION DEVICE AND POSITIVE ELECTRON BEAM APPLICATION DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To inspect the position, number, size and the like of the microflaw in a solid material of every kind inclusive of a semiconductor device or a metal material at a high speed with special resolving power with a nanometer order. <P>SOLUTION: A converged electron beam device is loaded with a positive electron irradiating function, and flaw position data, converged electron beam position data and the number of flaws or the size of a flaw are obtained from the detection data ofγrays generated by the pair extinction of electrons and positive electrons, and these two-dimensional distribution data are displayed on a monitor. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004340652(A) 申请公布日期 2004.12.02
申请号 JP20030135265 申请日期 2003.05.14
申请人 HITACHI LTD;HITACHI HIGH-TECHNOLOGIES CORP 发明人 TAKAGUCHI MASANARI;TOKIDA RURIKO
分类号 G01N23/22;G01N23/225;G01T1/161;G01T1/172;G21K1/00;G21K5/00;G21K5/04;H01J37/147;H01J37/256;H01J37/26;H01J37/28;(IPC1-7):G01N23/22 主分类号 G01N23/22
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