| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a compliant substrate for heteroepitaxies, a heteroepitaxial structure, and a compliant substrate fabricating method. <P>SOLUTION: The compliant substrate 1 includes a carrier substrate 2, a buried layer 3, and a single crystal top layer. The buried layer 3 is present between the carrier substrate 2 and the single crystal top layer 4, and the region of the top layer and /or the interface between the buried layer and the top layer or a region 5 of the vicinity thereof are weakened. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
