MASK FOR EXPOSURE, OPTICAL PROXIMITY EFFECT CORRECTION APPARATUS, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY EFFECT CORRECTION PROGRAM

摘要

PROBLEM TO BE SOLVED: To carry out an optical proximity effect correction of a simulation base in consideration of etching characteristics.

SOLUTION: After a processing objective pattern MP1 is subjected to rule-based correction so as to obtain an etching pattern EP corresponding to the processing objective pattern MP1 by referring an etching pattern EP, the rule-base corrected processing objective pattern MP3 is subjected to simulation-based correction to generate an optical proximity effect corrected mask pattern MP4 by considering the etching process.

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