| 摘要 |
PROBLEM TO BE SOLVED: To provide a cleaning method of heat processing equipment in which cleaning operation can be carried out quickly by removing an unnecessary film, i.e. a silicon oxide film formed by TEOS (tetraethyl orthosilicate), adhering to the structure in the heat processing equipment efficiently and quickly at a high etching rate. SOLUTION: The cleaning method of heat processing equipment for depositing an SiO<SB>2</SB>film using TEOS for a workpiece in a processing vessel which can be evacuated is provided with a cleaning step where HF gas and NH<SB>3</SB>gas are fed into the processing vessel. Cleaning operation is carried out quickly by removing an unnecessary adhesion film, i.e. a silicon oxide film formed by TEOS, by using a mixture gas of HF gas and NH<SB>3</SB>gas as cleaning gas like this while suppressing damage on the structure in the heat processing equipment. COPYRIGHT: (C)2005,JPO&NCIPI
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