发明名称 Silicon monocrystal wafer processing device, and method of manufacturing silicon monocrystal wafer and silicon epitaxial wafer
摘要 A silicon single crystal wafer process apparatus (10) having: a process chamber (11); a susceptor (12) which is disposed in the process chamber (11), and on an upper surface of which the silicon single crystal wafer (19) is placed; and a lift pin (14) which is provided to be capable of a going up and down operation with respect to the susceptor (12), for attaching or detaching the silicon single crystal wafer (19) to or from the susceptor (12) with the going up and down operation, in a state to support the silicon single crystal wafer (19) from a lower surface side, wherein the lift pin (14) is subjected to polishing on a contact end surface (14d) which contacts with a rear surface of the silicon single crystal wafer (19).
申请公布号 US2004241992(A1) 申请公布日期 2004.12.02
申请号 US20040489918 申请日期 2004.03.18
申请人 KONO RYUJI;TAKAMIZAWA SHOICHI 发明人 KONO RYUJI;TAKAMIZAWA SHOICHI
分类号 H01L21/683;C23C16/458;C30B25/12;C30B31/14;H01L21/205;H01L21/68;H01L21/687;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01L21/683
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