MULTIPLE CONDUCTIVE PLUG STRUCTURE INCLUDING AT LEAST ONE CONDUCTIVE PLUG REGION AND AT LEAST ONE BETWEEN-CONDUCTIVE-PLUG REGION FOR LATERAL RF MOS DEVICES

摘要

A lateral RF MOS transistor with at least one conductive plug structure comprising: (1) a semiconductor material of a first conductivity type having a first dopant concentration and a top surface; (2) a conductive gate overlying and insulated from the top surface of the semiconductor material; (3) at least two enhanced drain drift regions of the second conductivity type; the first region laying partially underneath the gate; the second enhanced drain drift region contacting the first enhanced drain drift region; (4) a drain region of the second conductivity type contacting the second enhanced drain drift region; (5) a body region of said RF MOS transistor of the first conductivity type; (6) a source region of the second conductivity type; (7) a body contact region of the first conductivity type; and (8) a plug region further comprising at least one conductive plug region, and at least one between-conductive-plug region.