| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor storage element which can easily record and read information, can stably hold contents recoded under a high temperature environment or at the time of long preservation and can easily be manufactured by a comparatively simple manufacturing method, and to provide a semiconductor storage using the element. <P>SOLUTION: The semiconductor storage is constituted so that an amorphous thin film 4 is sandwiched between a first electrode 2 and a second electrode 5, at least the first electrode 2 or the second electrode 5 includes Al or Cu, the amorphous thin film 4 is formed of an oxide. A magnetic storage device is constituted by being provided with a plurality of semiconductor storage elements 10, wiring connected to a first electrode 2-side, and wiring connected to a second electrode 5-side. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
