发明名称 PLASMA CVD APPARATUS AND FILM DEPOSITION METHOD USING THE SAME
摘要 <P>PROBLEM TO BE SOLVED: To uniformly deposit a DLC thin film at a low cost. <P>SOLUTION: A film deposition source 100 having a gas feed port 39 to feed film deposition gas, a magnetic field application coil 46 to generate the magnetic field, and a discharge means 110 comprising a discharge electrode 40, a DC electrode 43, and an RF electrode 44 is provided on a reaction tube 38, and any one of the discharge electrode 110, the DC electrode 43, and the RF electrode 44 is arbitrarily used, or these components are arbitrarily combined and used to provide a plasma CVD apparatus to generate plasma. <P>COPYRIGHT: (C)2005,JPO&NCIPI
申请公布号 JP2004339570(A) 申请公布日期 2004.12.02
申请号 JP20030137794 申请日期 2003.05.15
申请人 SONY CORP 发明人 TAKAHASHI KATSUE
分类号 H05H1/46;C23C16/503;C23C16/505;C23C16/517;H01L21/31 主分类号 H05H1/46
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