NON-VOLATILE MEMORY CELL WITH INCREASE COUPLING RATIO BETWEEN CONTROL GATE AND FLOATING GATE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A non-volatile memory cell and a manufacturing method thereof are provided to increase a coupling ratio between a control gate and a floating gate without the increase of height of the floating gate by forming partially the floating gate in a trench of an isolation layer. CONSTITUTION: An isolation layer(150a) for defining an active region(150) is formed in a semiconductor substrate(100). A trench is formed in the isolation layer. A floating gate(550) covers the active region and a sidewall of the trench adjacent to the active region. A control gate(750) covers the floating gate and crosses the active region. A tunnel insulating layer(200a) is formed between the floating gate and the active region. A inter-gate insulating layer(600) is formed between the control gate and the floating gate.