SEMICONDUCTOR DEVICE WITH SHORT CHANNEL PREVENTING INSULATING LAYER FOR INCREASING EFFICIENT CHANNEL LENGTH AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to increase the length of an efficient channel by using a short channel preventing insulation layer. CONSTITUTION: A gate insulating layer(115) is formed on a semiconductor substrate(100). A gate electrode structure(135) is formed on the gate insulating layer. A short channel preventing insulation layer(145) is formed along the upper surface of the resultant structure. Source and drain regions(165a,165b) are formed in the substrate to align the gate electrode structure. The source and drain regions are spaced apart from the gate electrode structure as much as the thickness of the short channel preventing insulation layer. The short channel preventing insulation layer has a thickness of 50 to 100 angstrom.