发明名称 |
Semiconductor device having transistor with high electro-static discharge capability and high noise capability |
摘要 |
A semiconductor device for use in includes a base and emitter shorted by means of a surface electrode. The surface electrode of a vertical-type bipolar transistor in which a P-type epitaxial growth layer and a P-type semiconductor substrate form the collector is electrically connected to the drain electrode of a lateral MOSFET by means of a metal electrode wiring. Upon application of a high ESD voltage and high surge voltage, the energy of the ESD and surge is absorbed by operation of the vertical-type bipolar transistor and is limited to a voltage equal to or less than the breakdown voltage of the lateral MOSFET that was to be destroyed.
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申请公布号 |
US2004238893(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040800013 |
申请日期 |
2004.03.15 |
申请人 |
TOBISAKA HIROSHI;FUJIHIRA TATSUHIKO;KIUCHI SHIN;MINOYA YOSHIAKI;ICHIMURA TAKESHI;YAEZAWA NAOKI;SAITOU RYU;FURUHATA SHOUICHI;HARADA YUICHI |
发明人 |
TOBISAKA HIROSHI;FUJIHIRA TATSUHIKO;KIUCHI SHIN;MINOYA YOSHIAKI;ICHIMURA TAKESHI;YAEZAWA NAOKI;SAITOU RYU;FURUHATA SHOUICHI;HARADA YUICHI |
分类号 |
H01L23/62;H01L27/02;H02H9/00;(IPC1-7):H02H9/00 |
主分类号 |
H01L23/62 |
代理机构 |
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代理人 |
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地址 |
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