发明名称 |
Method of fabricating a semiconductor device |
摘要 |
In a manufacturing process of a semiconductor device using a substrate having low heat resistance, such as a glass substrate, there is provided a method of efficiently carrying out crystallization of a semiconductor film and gettering treatment of a catalytic element used for the crystallization by a heating treatment in a short time without deforming the substrate. A heating treatment method of the present invention is characterized in that a light source is controlled in a pulsed manner to irradiate a semiconductor film, so that a heating treatment of the semiconductor film is efficiently carried out in a short time, and damage of the substrate due to heat is prevented. |
申请公布号 |
US2004241967(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040882634 |
申请日期 |
2004.07.02 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
YAMAZAKI SHUNPEI;TAKANO TAMAE;DAIRIKI KOJI |
分类号 |
H01L29/786;H01L21/20;(IPC1-7):C30B1/00;H01L21/76;H01L21/36 |
主分类号 |
H01L29/786 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|