发明名称 |
SEMICONDUCTOR PMD LAYER DIELECTRIC |
摘要 |
An embodiment of the invention is a method of manufacturing a semiconductor wafer 2 where a layer of undoped silicon glass 15 is formed over the front-end structure 3. Another embodiment of the present invention is an integrated circuit 2 having a back-end structure 4 in which the dielectric layer 15 contains undoped silicon glass. |
申请公布号 |
US2004238853(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030448097 |
申请日期 |
2003.05.29 |
申请人 |
HONG QI-ZHONG;HUANG PETER |
发明人 |
HONG QI-ZHONG;HUANG PETER |
分类号 |
H01L23/31;H01L23/532;(IPC1-7):H01L29/76 |
主分类号 |
H01L23/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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