HIGH SILICON CONTENT MONOMER AND POLYMER SUITABLE FOR 193 NM BILAYER RESIST

摘要

PROBLEM TO BE SOLVED: To obtain a polymerizable monomer having Si-containing groups, transparent at 193 nm and ethylenically unsaturated group.

SOLUTION: The polymerizable monomer has the Si-containing groups separated each other by a group X transparent at 193 nm and having no reactivity and has the ethylenically unsaturated group. Polymers obtained from the monomer can be used in processes for forming sub-100 nm images by using a chemically amplified, radiation sensitive bilayer resist. The bilayer resist is disposed on a substrate and comprises (i) a top imaging layer comprising a radiation sensitive acid generator and (ii) an organic underlayer. The bilayer resist can be used in the production of integrated circuits.

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