| 摘要 |
PROBLEM TO BE SOLVED: To reduce an area occupied for integration by a plurality of elements by forming the elements in a limited area, so as to promote miniaturization of a display pixel pitch, which accompanies higher definition (increase in the number of pixels) and further reduction in the size of a device in the future. SOLUTION: A substrate is doped being inclined by 30-60°with respect to a direction of irradiation to form a self-aligned impurity region (Lov) of low concentration that overlaps a gate electrode, and thus to form a TFT having a GOLD (gate-drain overlapped lightly doped drain) structure. The length of the low concentration impurity region (Lov), in a longitudinal direction of a channel, that overlaps the gate electrode may be 20-150nm, preferably, 50-120nm. COPYRIGHT: (C)2005,JPO&NCIPI |
