| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a surface-emission semiconductor laser element which emits the stable laser beam of a unimodal lateral mode. <P>SOLUTION: The surface-emission semiconductor laser element 10 is provided with the laminated structure of a lower DBR 14, a lower cladding layer 16, a light emission layer 18, an upper cladding layer 20, an upper DBR 22, and a contact layer 24 formed in order on an n-type GaAs substrate 12. Its upper part is formed as a mesa post 26 having a current narrowed layer 28. The contact layer 24 has a first opening 30, and an SiO<SB>2</SB>film 32 has a third opening 34 larger than the first opening to expose the contact layer annularly. A p-side electrode 36 is extended onto the contact layer and the SiO<SB>2</SB>film from the region on the upper DBR of the inner peripheral part of the first opening. The p-side electrode has a second opening part 38 formed on the upper DBR to expose the upper DBR from the second opening. By the stepped constitution of the contact layer, an insulation layer and the p-side electrode, birefringence distribution is formed which changes from the center of the second opening part, that is from the center of a light emission surface, to the outside, thereby turning the lateral mode as a single mode. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
