| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To accurately program a reference element for reading a memory state in a short period of time by separating the memory function from the transistor operation function of a gate insulating film, thinning the gate insulating film to suppress the short channel effect without losing the memory function, and facilitating miniaturization. <P>SOLUTION: The gate terminal of each side wall memory element 522 is connected to a word line 523, the source terminal is connected to the ground, and the drain terminal is connected to a bit line 524. To select a specific column, a transistor 525 is arranged in each column. An N type electric field-effect transistor 526 cascade connected thereto is arranged in the drain terminal of the transistor 525, and a drain bias is applied to the side wall memory element 522. The source terminal of the N type electric field effect transistor 526 is connected to a first load element 527 connected to a Vcc. As the first load element, an N type electric field-effect transistor or a resistor element is used. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
