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发明名称
Herstellungsverfahren für ein CMOS-Bauteil
摘要
申请公布号
DE69327145(T2)
申请公布日期
2000.06.29
申请号
DE1993627145T
申请日期
1993.10.12
申请人
NCR INTERNATIONAL, INC.;HYUNDAI ELECTRONICS AMERICA, MILPITAS;SYMBIOS, INC.
发明人
ALLMAN, DERRYL DWAYNE JOHN;KWONG, DIM-LEE
分类号
H01L21/225;H01L21/316;H01L21/336;H01L21/8238;H01L27/092;H01L29/78;(IPC1-7):H01L21/82
主分类号
H01L21/225
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