Mask, mask blank, photosensitive film therefor and fabrication thereof

摘要

Disclosed are masks and mask blanks for photolithographic processes, photosensitive films and fabrication method therefor. Photosensitive films are deposited on a substrate in the masks for recording permanent pattern features via UV exposure. The masks are advantageously phase-shifting, but can be gray-scale masks having index patterns with arbitrary distribution of refractive index and pattern depth. The masks may have features above the surface formed from opaque or attenuating materials. Boro-germano-silicate photosensitive films having a composition consisting essentially, in terms of mole percentage, of: 0-20% of B2O3, 5-25% of GeO2 and the remainder SiO2 can be used for the film. The film is advantageously deposited by using PECVD wherein tetramethoxygermane is used as the germanium source.