FIELD EFFECT TRANSISTOR USING INSULATOR-SEMICONDUCTOR TRANSITION MATERIAL LAYER AS CHANNEL MATERIAL AND METHOD OF MANUFACTURING THE SAME
摘要
Provided is a field effect transistor including an insulator-semiconductor transition material layer. The insulator-semiconductor transition material layer selectively provides a first state where charged holes are not introduced to a surface of the insulator-semiconductor transition material layer when a gate field is not applied and a second state where a large number of charged holes are introduced to the surface of the insulator-semiconductor transition material layer to form a conductive channel when a negative field is applied. A gate insulating layer is formed on the insulator-semiconductor transition material layer. A gate electrode is formed on the gate insulating layer to apply a negative field of a predetermined intensity to the insulator-semiconductor transition material layer. A source electrode and a drain electrode are disposed to face each other at both sides of the insulator-semiconductor transition material layer so that charge carriers can flow through the conductive channel while the insulator-semiconductor transition material layer is in the second state.
申请公布号
WO2004105139(A1)
申请公布日期
2004.12.02
申请号
WO2003KR02893
申请日期
2003.12.30
申请人
ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE;KIM, HYUN-TAK;KANG, KWANG-YONG;YOUN, DOO-HYEB;CHAE, BYUNG-GYU
发明人
KIM, HYUN-TAK;KANG, KWANG-YONG;YOUN, DOO-HYEB;CHAE, BYUNG-GYU