METHOD FOR PRODUCING SINGLE CRYSTAL OF MULTI- ELEMENT OXIDE SINGLE CRYSTAL CONTAINING BISMUTH AS CONSTITUTING ELEMENT

摘要

A method for producing a multi-element oxide single crystal containing Bi as a constituting element, such as (Bi2O2)Am-1BmO3m+1 [wherein A represents Sr, Ba, Ca, Bi or the like, and B represents Ti, Ta or Nb], which comprises depositing a flux comprising a composition satisfying, in mole ratio, 0 < CUO/BI2O3 < 2 AND 0 &LE; TIO/BI2O3 < 7/6 on a substrate, and then depositing a single crystal on the substrate via said flux deposition layer, or comprises preparing a melt comprising a composition having the above mole ratios in the sum of a raw material and a flux and cooling the melt to thereby form a single crystal, or comprises depositing a flux comprising CuO on a substrate, and then depositing by the use of Bi6Ti3O12 to Bi8Ti3O12 as a target, which has excess Bi as compared with the objective film, to thereby supply Bi-Ti-O to said flux deposited layer and form a single crystal of Bi4Ti3O12 on the substrate. The method allows the production of the above oxide single crystal which is excellent in crystallinity.