FET FOR LARGE CURRENT AMPLIFICATION USING INSULATOR-SEMICONDUCTOR PHASE TRANSITION MATERIAL LAYER AS CHANNEL SUBSTANCE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An FET(Field Effect Transistor) and a manufacturing method thereof are provided to obtain large current amplification at a low gate voltage and a low source-drain voltage by using an insulator-semiconductor phase transition material layer as channel substance. CONSTITUTION: An insulator-semiconductor phase transition material layer(120) is formed on a substrate(110). A first state of few hole charges and a second state of a lot of hole charges are selectively obtained for the material layer according to the value of a gate voltage. A gate insulating layer(150) is formed on the material layer. A gate electrode(160) is formed on the gate insulating layer. When the gate electrode applies a predetermined negative voltage to the material layer, a lot of hole charges flow into a surface of the material layer. A source(130) and a drain(140) are formed at both sides of the material layer to flow carriers through the material layer in the second state. At this time, the material layer is used as a conductive channel. The material layer is made of VO2.