| 摘要 |
Disclosed herein is a nonvolatile memory device having a plurality of nonvolatile memory cells. In the nonvolatile memory cell, a memory gate electrode is formed over a first semiconductor region with a gate insulating film and a gate nitride film interposed therebetween. First and second switch gate electrodes, and first and second signal electrodes used as source/drain electrodes are formed on both sides of the memory gate electrode. Electrons are injected into the gate nitride film from the source side so that each of the memory cells stores information therein. The memory gate electrode and the switch gate electrodes extend in the same direction. Thus, even if a high voltage is applied to the memory gate electrode of each write-intended memory cell which uses the memory gate electrode and switch gate electrodes in common, and write and write blocking voltages are applied through the first and second signal electrodes, each memory cell intended for write non-selection can avoid the application of a high electric field thereto owing to the switch gate electrodes held in a cut-off state.
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