| 发明名称 |
Memory device |
| 摘要 |
Embodiments of the present invention provide a memory device. In one embodiment, the memory device comprises an array of memory cells configured to provide resistive states, a read circuit configured to sense the resistive states and a resistor. The resistor is configured to provide a resistance to the read circuit that is configured to select the resistor and sense the resistance to test the read circuit.
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| 申请公布号 |
US2004240255(A1) |
申请公布日期 |
2004.12.02 |
| 申请号 |
US20030448574 |
申请日期 |
2003.05.30 |
| 申请人 |
SMITH KENNETH KAY;BROCKLIN ANDREW VAN;FRICKE PETER;PERNER FREDERICK A.;ELDREDGE KENNETH JAMES |
发明人 |
SMITH KENNETH KAY;BROCKLIN ANDREW VAN;FRICKE PETER;PERNER FREDERICK A.;ELDREDGE KENNETH JAMES |
| 分类号 |
G11C11/00;G11C11/14;G11C11/15;G11C11/16;G11C29/50;(IPC1-7):G11C11/00 |
主分类号 |
G11C11/00 |
| 代理机构 |
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