| 发明名称 |
Passivation scheme for bumped wafers |
| 摘要 |
A bumped wafer for use in making a chip device. The bumped wafer includes two titanium layers sputtered altematingly with two copper layers over a non-passivated die. The bumped wafer further includes under bump material under solder bumps contained thereon. |
| 申请公布号 |
US2004241977(A1) |
申请公布日期 |
2004.12.02 |
| 申请号 |
US20040818647 |
申请日期 |
2004.04.05 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
JOSHI RAJEEV |
| 分类号 |
H01L21/60;H01L23/485;(IPC1-7):H01L21/44 |
主分类号 |
H01L21/60 |
| 代理机构 |
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代理人 |
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