SEMICONDUCTOR MEMORY, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY, AND PORTABLE ELECTRONIC EQUIPMENT

摘要

PROBLEM TO BE SOLVED: To make a semiconductor memory and a semiconductor device having a constitution where volatile and nonvolatile memories are formed on one chip by a simple process.

SOLUTION: A volatile memory element 312 and a nonvolatile memory element 313 each consisting of a field effect transistor are formed on one semiconductor chip. The volatile memory element 312 has a body region 42, a gate electrode 15 and diffusion layer regions 31 and 32, and the quantity of current between the diffusion layer regions 33 and 34 is varied when a voltage is applied to the gate electrode 15 depending on the quantity of current being held in the body region 42. The nonvolatile memory element 313 has diffusion layer regions 35 and 36, a gate electrode 15 and memory function parts 25 and 26, and the quantity of current between the diffusion layer regions 35 and 36 is varied when a voltage is applied to the gate electrode 15 depending on the quantity of charges being held in the memory function parts 25 and 26.

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