MASK FOR EXPOSURE, OPTICAL PROXIMITY EFFECT CORRECTION APPARATUS, OPTICAL PROXIMITY EFFECT CORRECTION METHOD, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND OPTICAL PROXIMITY EFFECT CORRECTION PROGRAM

摘要

PROBLEM TO BE SOLVED: To correct an optical proximity effect while considering a photomargin.

SOLUTION: The following patterns are generated: a correction pattern P0 corresponding to a state M0 with a matched focus and the optimum exposure light quantity; a correction pattern P1 corresponding to a state M1 with a matched focus and the lower limit M1 of the exposure light quantity; a correction pattern P2 corresponding to a state M2 with a matched focus and the upper limit M2 of the exposure light quantity; a correction pattern P3 corresponding to a state M3 with a mismatched focus shifted to the lower side and the optimum exposure light quantity; and a correction pattern P4 corresponding to a state M4 with a mismatched focus shifted to the upper side and the optimum exposure light quantity. These patterns P0 to P4 are synthesized to generate a synthesized pattern P5 reflecting the fluctuation of the light quantity and the shift of the focus.

COPYRIGHT: (C)2005,JPO&NCIPI