| 摘要 |
A connection pad, an insulating film, a ground layer a protective film, first to third wirings and posts S0, S1, G, D on the wirings are disposed on a semiconductor substrate. In this case, the first wiring transmits a high frequency signal, and a dummy pad portion and dummy post D for restraining attenuation of the high frequency signal are disposed midway in the wiring and not connected to external, circuits. An opening for decreasing a floating capacity is disposed in the ground layer under the posts S0, D. |
