| 摘要 |
PURPOSE: A method of planarizing a semiconductor device is provided to perform easily succeeding planarizing and fabricating processes by forming selectively a temporary pattern on an interlayer dielectric using DOF(Depth Of Focus). CONSTITUTION: An interlayer dielectric(25) is formed on a semiconductor substrate(21) with lower structures(23). At this time, the interlayer dielectric has a non-uniform topology along the lower structures. The first photoresist layer is coated thereon. The first photoresist pattern(27) is selectively formed on a recessed portion of the interlayer dielectric. The second photoresist layer(35) is coated on the resultant structure. A planarized interlayer dielectric is formed by performing etch-back on the second photoresist layer, the first photoresist pattern and the interlayer dielectric using the same etch selectivity.
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