| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a lithographic processing method which forms desirable patterns to a target portion of a radiation sensitive material layer by using multiple exposures, and a device manufactured thereby. <P>SOLUTION: This lithographic double-exposure processing method, which forms patterns in a device layer, has a step of expanding the forms of a first mask pattern (31) and a second mask pattern (32) in a predetermined expansion distance, a step of providing resist-processed forms corresponding to the above-mentioned patterns and thereby of resist-processing the radiation sensitive layer of an exposed substrate so that each resist-processed form is expanded relative to the nominal size, and a step of reducing the resist-processed forms over a predetermined reduction distance by performing additional resist processing on the resist-processed forms, before first and second exposure steps. <P>COPYRIGHT: (C)2005,JPO&NCIPI |
