发明名称 METHOD FOR MANUFACTURING MASK SUBSTRATE
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask substrate by which a degradation problem in the flatness of a mask substrate due to chucking the mask substrate to the mask stage of a wafer exposure apparatus is eliminated and decrease in the production yield can be prevented. <P>SOLUTION: The method for manufacturing a mask substrate includes processes of: acquiring first information indicating the surface feature of the principal face and second information indicating the flatness of the principal face before and after chucking the substrate to the mask stage of the exposure apparatus, with respect to a plurality of mask substrates; and selecting the second information indicating desired flatness from the produced relations, and preparing another mask substrate having the same surface feature as the surface feature indicated by the first information corresponding to the selected second information, separately from the above plurality of the mask substrates. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p>
申请公布号 JP2004341564(A) 申请公布日期 2004.12.02
申请号 JP20040261198 申请日期 2004.09.08
申请人 TOSHIBA CORP 发明人 ITO MASAMITSU
分类号 G03F1/60;G03F1/68;H01L21/027;(IPC1-7):G03F1/08 主分类号 G03F1/60
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