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发明名称
Plasma etching method
摘要
The present invention relates to a method of plasma etching and a method of operating a plasma etching apparatus.
申请公布号
US6165375(A)
申请公布日期
2000.12.26
申请号
US19970935705
申请日期
1997.09.23
申请人
CYPRESS SEMICONDUCTOR CORPORATION
发明人
YANG, CHAN-LON;RAGHURAM, USHA;KAUFMAN, KIMBERLEY A.;ARNZEN, DANIEL;NULTY, JAMES
分类号
H01L21/311;(IPC1-7):B44C1/22
主分类号
H01L21/311
代理机构
代理人
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