发明名称 |
Method of manufacture of a PCRAM memory cell |
摘要 |
The invention provides a method of forming a resistance variable memory element and the resulting element. The method includes forming an insulating layer having an opening therein; forming a metal containing layer recessed in the opening; forming a resistance variable material in the opening and over the metal containing layer; and processing the resistance variable material and metal containing layer to produce a resistance variable material containing a diffused metal within the opening.
|
申请公布号 |
US2004238918(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20040886676 |
申请日期 |
2004.07.09 |
申请人 |
MOORE JOHN T.;CAMPBELL KRISTY A.;GILTON TERRY L. |
发明人 |
MOORE JOHN T.;CAMPBELL KRISTY A.;GILTON TERRY L. |
分类号 |
H01L21/20;H01L21/336;H01L21/8234;H01L21/8244;H01L27/24;H01L29/00;H01L45/00;(IPC1-7):H01L21/823;H01L21/824 |
主分类号 |
H01L21/20 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|