发明名称 |
Siloxane-based resin and interlayer insulating film for a semiconductor device made using the same |
摘要 |
Disclosed herein are a siloxane-based resin having novel structure and an interlayer insulating film for a semiconductor device formed using the same. The siloxane-based resins have so low dielectric constant in addition to excellent mechanical properties, heat-stability and crack-resistance that they are useful materials for an insulating film between interconnect layers of a semiconductor device.
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申请公布号 |
US2004242013(A1) |
申请公布日期 |
2004.12.02 |
申请号 |
US20030695777 |
申请日期 |
2003.10.30 |
申请人 |
LYU YI YEOL;YIM JIN HEONG;RYU JOON SUNG;SONG KI YONG |
发明人 |
LYU YI YEOL;YIM JIN HEONG;RYU JOON SUNG;SONG KI YONG |
分类号 |
C08G77/10;C08G77/14;C08G77/50;H01L21/312;(IPC1-7):H01L21/302;H01L21/461 |
主分类号 |
C08G77/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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