APPARATUSES AND METHODS FOR FORMING A SUBSTANTIALLY FACET-FREE EPITAXIAL FILM

摘要

A method of making a substantially facet-free epitaxial film is disclosed. A substrate having predetermined regions is first provided. An epitaxial film forming process gas and a carrier gas are introduced into a reactor chamber. The epitaxial film forming process gas and the carrier have a flow ratio between 1:1 and 1:200. The epitaxial film is deposited into the predetermined regions of the substrate wherein the substrate has a temperature between about 350°C and about 900°C when the epitaxial film is being deposited.