EEPROM WITH NON-UNIFORM MEMORY GATE OXIDE LAYER FOR REDUCING OPERATION VOLTAGE AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: An EEPROM(Electrically Erasable and Programmable Read Only Memory) and a manufacturing method thereof are provided to reduce an operation voltage of a cell by using a gate oxide layer with nonuniform thickness. CONSTITUTION: A memory gate oxide layer(215) with non-uniform thickness is formed on a semiconductor substrate(200). A tunnel oxide layer(212) is laterally connected with the memory gate oxide layer. A floating gate(216a) is formed along the upper surface of the memory gate oxide layer and the tunnel oxide layer. An insulating pattern(218a) and a control gate(220a) are formed thereon. Source and drain regions(213) are formed in the substrate to align the floating and control gates.