发明名称 HIGH VOLTAGE GENERATOR FOR BURN IN TEST, ESPECIALLY INCREASING INTERNAL POWER SUPPLY POTENTIAL IN PROPORTION TO EXTERNAL POWER SUPPLY POTENTIAL
摘要 PURPOSE: A high voltage generator for burn in test is provided to increase reliability while verifying a semiconductor memory device by suppressing the variation of a trigger point according to process and temperature. CONSTITUTION: A reference potential generation unit(110) outputs a reference power supply potential(Vr1). An internal power supply potential generation unit(130) makes an internal power supply potential(Vrc) using the reference potential. A current mirror differential amplifier(150) increases an output potential(Vrc) of the internal power supply potential generation unit during a burn in test mode. An internal power supply potential driving unit(160) increases the internal power supply potential in proportion to an external power supply potential during the burn in test mode. And a pumping unit(110) powers up the reference potential generation unit and the internal power supply potential generation unit and the internal power supply potential driving unit.
申请公布号 KR20040100670(A) 申请公布日期 2004.12.02
申请号 KR20030033089 申请日期 2003.05.23
申请人 HYNIX SEMICONDUCTOR INC. 发明人 HWANG, MI HYEON;SON, JONG HO
分类号 G11C5/14;(IPC1-7):G11C5/14 主分类号 G11C5/14
代理机构 代理人
主权项
地址